| PART |
Description |
Maker |
| SIR-320ST3F |
Sensors > Infrared Light Emitting Diodes
|
ROHM
|
| TLP908 TLP908LB |
POSITION, LINEAR SENSOR-DIFFUSE, 0.5-1.5mm, 0.50-0.75mA, RECTANGULAR, THROUGH HOLE MOUNT
PHOTOREFLECTIVE SENSORS INFRARED LED PHOTO TRANSISTOR PHOTOREFLECTIVE传感器红外发光二极管光敏三极
PHOTOREFLECTIVE SENSORS INFRARED LED PHOTOTRANSISTOR
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| LN59-LNA2702L LNA2702L LN59 |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
Panasonic Corporation
Panasonic Semiconductor
|
| TSL262 TSL260 TSL261 |
IR LIGHTTOVOLTAGE OPTICAL SENSORS
IR LIGHTTOVOLTAGE OPTICAL SENSORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| IRA-E940ST1 IRA-E420 IRA-E420QW1 IRA-E420S1 IRA-E4 |
Pyroelectric Infrared Sensors
|
MURATA[Murata Manufacturing Co., Ltd.]
|
| G9208-256W G9211-256S G9213-256S G9206-256W G9212- |
Near infrared image sensors (0.9 to 1.67 渭m / 2.55 渭m)
Near infrared image sensors (0.9 to 1.67 μm / 2.55 μm)
|
Hamamatsu Corporation
|
| OP250 |
Infrared Light Emitting Diode
|
OPTEK Technologies
|
| TSL250R TSL251R TSL252 TSL252R |
LIGHT-TO-VOLTAGE OPTICAL SENSORS
|
ams AG
austriamicrosystems AG
|
| TLN104 TLN108 TLN108LB |
INFRARED LEDS PHOTO SENSORS
|
TOSHIBA[Toshiba Semiconductor]
|
| LN172 |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
